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NXP Semiconductors - NPN medium power transistors

Numéro de référence BCP56
Description NPN medium power transistors
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BCP56 fiche technique
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
Rev. 9 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
BCP56
SOT223
BCX56
SOT89
BC56PA
SOT1061
JEITA
SC-73
SC-62
-
[1] Valid for all available selection groups.
JEDEC
-
TO-243
-
PNP complement
BCP53
BCX53
BC53PA
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
hFE
collector-emitter voltage
collector current
peak collector current
DC current gain
hFE selection -10
hFE selection -16
open base
single pulse; tp 1 ms
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
VCE = 2 V; IC = 150 mA
-
-
-
[1] 63
[1] 63
[1] 100
-
-
-
-
-
-
80 V
1A
2A
250
160
250
[1] Pulse test: tp 300 s; = 0.02.

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