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Numéro de référence | BCP55 | ||
Description | Surface mount Si-Epitaxial PlanarTransistors | ||
Fabricant | Diotec Semiconductor | ||
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1 Page
BCP 54, BCP 55, BCP 56
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
6.5±0.2
3±0.1
4
1.65
1 0.7
2.3
23
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.3 W
SOT-223
0.04 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Koll.-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCP 54 BCP 55 BCP 56
45 V
60 V
80 V
45 V
60 V
100 V
5V
1.3 W 1)
1A
1.5 A
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 30 V, Tj = 125/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 10 :A
– – 100 nA
– – 500 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
26 01.11.2003
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Pages | Pages 2 | ||
Télécharger | [ BCP55 ] |
No | Description détaillée | Fabricant |
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