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Numéro de référence | BFR180 | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
NPN Silicon RF Transistor
For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
BFR180
3
2
1 VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFR180
RDs
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 127 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Pin Configuration
2=E
3=C
Package
SOT23
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
8
10
10
2
4
0.5
30
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
780
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Jun-27-2001
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Pages | Pages 7 | ||
Télécharger | [ BFR180 ] |
No | Description détaillée | Fabricant |
BFR180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) | Siemens Semiconductor Group |
BFR180 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFR180W | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) | Siemens Semiconductor Group |
BFR180W | NPN Silicon RF Transistor | Infineon Technologies AG |
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