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Vishay Telefunken - Silicon NPN Planar RF Transistor

Numéro de référence BFQ81
Description Silicon NPN Planar RF Transistor
Fabricant Vishay Telefunken 
Logo Vishay Telefunken 





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BFQ81 fiche technique
Silicon NPN Planar RF Transistor
BFQ81
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to 2 GHz, especially for mobile telephone.
Features
D Small feedback capacitance
D Low noise figure
D Low cross modulation
1
94 9280
23
BFQ81 Marking: RA
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
13 581–2
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
25
16
2
30
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85023
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
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