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Numéro de référence | BFQ74 | ||
Description | NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range/ and broadband analog and digital applications) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
NPN Silicon RF Transistor
q For low-noise amplifiers in the GHz range,
and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
BFQ 74
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 74
Marking
74
Ordering Code
(tape and reel)
Q62702-F788
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f ≥ 10 MHz
Base current
Total power dissipation, TS ≤ 115 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
Ptot
Tj
TA
Tstg
Values
Unit
16 V
25
25
2
35 mA
45
5
300 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 280
≤ 200
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
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Pages | Pages 14 | ||
Télécharger | [ BFQ74 ] |
No | Description détaillée | Fabricant |
BFQ70 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | Siemens Semiconductor Group |
BFQ71 | NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) | Siemens Semiconductor Group |
BFQ72 | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) | Siemens Semiconductor Group |
BFQ73 | NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) | Siemens Semiconductor Group |
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