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Siemens Semiconductor Group - NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)

Numéro de référence BFQ70
Description NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BFQ70 fiche technique
NPN Silicon RF Transistor
q For low-noise IF and broadband amplifiers in
antenna and telecommunications systems at
collector currents from 2 mA to 20 mA.
q Hermetically sealed ceramic package
q HiRel/Mil screening available.
BFQ 70
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 70
Marking
70
Ordering Code
(tape and reel)
Q62702-F774
Pin Configuration
1 2 34
B ECE
Package1)
Cerex-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 121 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15 V
20
20
2.5
35 mA
4
300 mW
175 ˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
260
180
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 16 mm × 25 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.

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