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PDF BFQ540 Data sheet ( Hoja de datos )
| Número de pieza | BFQ540 | |
| Descripción | NPN wideband dual transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFQ540 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BFQ540
NPN wideband dual transistor
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1998 Aug 27
1 page  
Philips Semiconductors
NPN wideband dual transistor
Product specification
BFQ540
1.0
handbook, halfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA688
8 VCB (V) 12
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
12
handbook, halfpage
fT
(GHz)
8
4
MRA689
VCE = 8V
VCE = 4V
0
10−1
1
10 IC (mA) 102
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
handbook,2h0alfpage
dim
(dB)
30
MBG242
40
50
60
70
10 20 30 40 50 60
IC (mA)
handbdo2ok,2h0alfpage
(dB)
30
MBG243
40
50
60
70
10 20 30 40 50 60
IC (mA)
VCE = 8 V; Vo = 475 mV; RL = 50 Ω.
fp + fq − fr = 793.25 MHz; Tamb = 25 °C.
Fig.6 Intermodulation distortion as a function of
collector current; typical values.
VCE = 8 V; Vo = 225 mV; RL = 50 Ω; fp + fq = 810 MHz; Tamb = 25 °C.
Fig.7 Second order intermodulation distortion as
a function of collector current; typical values.
1998 Aug 27
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFQ540.PDF ] | |
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