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PDF BFQ29 Data sheet ( Hoja de datos )
| Número de pieza | BFQ29 | |
| Descripción | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
q For low-noise IF and broadband amplifiers up to
1 GHz at collector currents from 1 mA to 20 mA.
q CECC-type available: CECC 50002/258.
BFQ 29P
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 29P
Marking
KC
Ordering Code
(tape and reel)
Q62702-F659
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 65 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15 V
20
3
30 mA
4
280 mW
150 ˚C
– 65 … + 150
– 65 … + 150
Rth JA
Rth JS
≤ 385
≤ 305
K/W
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1 page  
BFQ 29P
Common Emitter Noise Parameters
f
Fmin
Gp(Fmin)
Γopt
GHz
dB
dB
MAG ANG
IC = 3 mA, VCE = 6 V, Z0 = 50 Ω
0.01 0.85 –
(ZS = 130 Ω)
IC = 5 mA, VCE = 6 V, Z0 = 50 Ω
0.01 0.85 –
0.8 1.25 13
(ZS = 100 Ω)
0.25 93.5
RN
Ω
–
–
11.1
N
–
–
–
0.20
F50 Ω
dB
1.2
1.1
1.45
G p(F50Ω)
dB
–
–
14
Noise figure F = f (ZS)
VCE = 6 V, f = 10 MHz
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BFQ29.PDF ] | |
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