(PDF) BFQ193 Datasheet - NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)

Número de pieza	BFQ193
Descripción	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz BFQ 193 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFQ 193 RCs Q62702-F1312 1=B 2=C 3=E Package SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS Values 12 20 2 80 10 600 150 - 65 ... + 150 - 65 ... + 150 Unit V mA mW °C ≤ 95 K/W Semiconductor Group 1 Dec-13-1996 1 page

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PDF BFQ193 Data sheet ( Hoja de datos )