PDF BFP650 Data sheet ( Hoja de datos )

Número de pieza	BFP650
Descripción	High Linearity Silicon Germanium Bipolar RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices 1 page BFP650 List of Figures List of Figures Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 5-1 BFP650 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA. . . . . . . . . . . . . 17 Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19 Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 20 Figure 5-9 Collector Base Capacitance CCCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22 Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 70 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22 Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 30 / 70 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 5-14 Source Impedance for Minimum Noise Figure opt = f (f), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . 23 Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 30 / 70 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 30 / 70 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25 Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . 26 Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 7-3 Marking Example (Marking BFP650: R5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 7-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet 5 Revision 1.1, 2012-09-13 5 Page 5 Electrical Characteristics BFP650 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Collector emitter breakdown voltage V(BR)CEO Min. 4 Collector emitter leakage current ICES – – Collector base leakage current Emitter base leakage current DC current gain ICBO IEBO hFE – – 100 Values Typ. Max. 4.5 – 0.1 1 1 40 1 40 10 500 170 250 Unit Note / Test Condition V IC = 3 mA, IB = 0 Open base μA VCE = 13 V, VBE = 0 nA VCE = 5 V, VBE = 0 E-B short circuited nA VCB = 5 V, IE = 0 Open emitter nA VEB = 0.5 V, IC = 0 Open collector VCE = 3 V, IC = 70 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Symbol Transition frequency Min. fT 31 Collector base capacitance CCB – Collector emitter capacitance CCE – Emitter base capacitance CEB – Values Typ. Max. 42 – 0.26 0.4 0.45 – 1.3 – Unit Note / Test Condition GHz pF pF pF VCE = 3 V, IC = 70 mA, f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz Emitter grounded VCE = 3 V, VBE = 0 V f = 1 MHz Base grounded VEB = 0.5 V, VCB = 0 V f = 1 MHz Collector grounded Data Sheet 11 Revision 1.1, 2012-09-13 11 Page

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