|
|
Datasheet BFP620F-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BFP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BFP10 | (BFPxx) Class A Low Noise Thomson Semiconductors data | | |
| 2 | BFP136 | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3  Siemens Semiconductor Group transistor | | |
| 3 | BFP136 | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configu  Infineon Technologies AG transistor | | |
| 4 | BFP136W | NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3 Siemens Semiconductor Group transistor | | |
| 5 | BFP136W | NPN Silicon RF Transistor BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configu Infineon Technologies AG transistor | | |
| 6 | BFP180 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) BFP 180
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | | |
| 7 | BFP180W | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) BFP 180W
NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Siemens Semiconductor Group transistor | |
| Esta página es del resultado de búsqueda del BFP620F-PDF.HTML. Si pulsa el resultado de búsqueda de BFP620F-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |