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PDF BFP620 Data sheet ( Hoja de datos )
| Número de pieza | BFP620 | |
| Descripción | NPN Silicon Germanium RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFP620 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Low Noise SiGe:C Bipolar RF Transistor
• Highly linear low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Based on Infineon's reliable high volume
Silicon Germanium technology
• Ideal for CDMA and WLAN applications
• Collector design provides high linearity of
14.5 dBm OP1dB for low voltage application
• Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
Outstanding noise figure NFmin = 1.3 dB at 6 GHz
• Accurate SPICE GP model enables effective
design in process
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
3
4
BFP620
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620
Marking
Pin Configuration
R2s 1=B 2=E 3=C 4=E -
-
Package
SOT343
1 2013-09-13
1 page  
Third order Intercept Point IP3 =ƒ(IC)
(Output, ZS = ZL=50 Ω)
VCE = parameter, f = 900 MHz
27
dBm
2.3V
21 1.8V
18
15 1.3V
12
0.8V
9
6
3
00 10 20 30 40 50 60 70 80 mA 100
IC
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
65
GHz
55 1.3 to 2.3
50
45
1
40
35
30
25 0.8
20 0.5
15
0.3
10
5
00 10 20 30 40 50 60 70 80 mA 100
IC
BFP620
Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = parameter
Power gain Gma, Gms = ƒ(IC)
VCE = 1.5V
f = Parameter in GHz
30
dB
0.9
26
24
22
1.8
20
18 2.4
16 3
14 4
12 5
10 6
80 10 20 30 40 50 60 70 mA 90
IC
5 2013-09-13
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BFP620.PDF ] | |
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