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Número de pieza | BFP520 | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP520 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite
receivers and oscillators up to 22 GHz
• High gain and low noise at high frequencies
due to high transit frequency fT = 45 GHz
• Easy to use Pb-free (RoHS compliant) and
halogen free industry standard package with
visible leads
• Qualification report according to AEC-Q101
available
BFP520
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP520
Marking
Pin Configuration
APs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 105 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
1TS is measured on the emitter lead at the soldering point to pcb
Value
2.5
2.4
10
10
1
50
5
125
150
-55 ... 150
Unit
V
mA
mW
°C
1 2015-10-12
1 page Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 20 mA
44
dB
36
Gms
32
28
24
20 |S21|²
16
Gma
12
8
4
00
1
2
3
4 GHz
6
f
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
32
dB
0.9
24 1.8
2.4
20 3
16 4
5
12 6
8
4
00 0.5 1 1.5 2 V
3
VCE
BFP520
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
32
dB
0.9
24 1.8
2.4
20
3
16 4
5
12 6
8
4
00 5 10 15 20 25 30 35 mA 45
IC
Minimum noise figure NFmin = ƒ(IC)
VCE = 2 V, ZS = ZSopt
3
dB
2
1.5
f = 6 GHz
f = 5 GHz
1 f = 4 GHz
f = 3 GHz
f = 2.4 GHz
0.5
f = 1.8 GHz
f = 0.9 GHz
00 5 10 15 20 25 30 mA 40
IC
5 2015-10-12
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BFP520.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP520 | NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) | Siemens Semiconductor Group |
BFP520 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
BFP520F | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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