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Número de pieza | BFP520 | |
Descripción | NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP520 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
Preliminary data
• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding Ga = 20 dB
Noise Figure F = 0.95 dB
• For oscillators up to 15 GHz
• Transition frequency fT = 45 GHz
• Gold metalization for high reliability
• SIEGET ® 45 - Line
Siemens Grounded Emitter Transistor
45 GHz fT - Line
SIEGET®45 BFP 520
3
4
2
1 VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
BFP 520 APs
Q62702-F1794
1=B 2=E 3=C 4=E
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 105 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
2.5
12
1
40
4
100
150
-65 ...+150
-65 ...+150
≤ 450
Package
SOT-343
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109998-1-1919-081
1 page BFP 520
For non-linear simulation:
• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
• If you need simulation of thereverse characteristics, add the diode with the
C’-E’- diode data between collector and emitter.
• Simulation of package is not necessary for frequenties < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
• This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
EE
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
• Higher gain because of lower emitter inductance.
• Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
The AC characteristics are verified by random sampling.
SSeemmicioconndduuctcotor rGGrorouupp
55
Sep-109998-1-1919-081
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BFP520.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP520 | NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) | Siemens Semiconductor Group |
BFP520 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
BFP520F | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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