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PDF BFP490 Data sheet ( Hoja de datos )
| Número de pieza | BFP490 | |
| Descripción | NPN Silicon RF Transistor (Q62702-F1721) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFP490 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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NPN Silicon RF Transistor
Preliminary data
• For high power amplifiers
• Compression point P-1dB = 26.5 dBm at 1.8 GHz
maxim. available Gain Gma = 9.5 dB at 1.8 GHz
• Transition frequency fT > 17 GHz
• Gold metalization for high reliability
• SIEGET ® 25 - Line
Siemens Grounded Emitter Transistor
25 GHz fT - Line
SIEGET®25 BFP 490
4
5
3
2
1
VPW05980
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BFP 490 AOs
Q62702-F1721 1 = B 2 = E 3 = C 4 = C 5 = E SCT-595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 85 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
4.5
15
1.5
600
60
1000
150
-65 ...+150
-65 ...+150
≤ 65
Unit
V
mA
mW
°C
K/W
1) TS is measured on the emitter lead at the soldering point
mounted on alumina 15 mm x 16,7 mm x 0.7 mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109998-1-1919-081
1 page  
BFP 490
For non-linear simulation:
• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
• If you need simulation of thereverse characteristics, add the diode with the
C’-E’- diode data between collector and emitter.
• Simulation of package is not necessary for frequenties < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
• This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
EE
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
• Higher gain because of lower emitter inductance.
• Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
The AC characteristics are verified by random sampling.
SSeemmicioconndduuctcotor rGGrorouupp
55
Sep-109998-1-1919-081
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BFP490.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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