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PDF BFP405F Data sheet ( Hoja de datos )
| Número de pieza | BFP405F | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• For low current applications
• Minimum noise figure NFmin = 1.25 dB at 1.8 GHz
Outstanding Gms = 22.5 dB at 1.8 GHz
• Transition frequency fT = 25 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
BFP405F
3
2
4
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP405F
Marking
Pin Configuration
ALs 1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
VCES
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Base current
Total power dissipation1)
IB
Ptot
TS ≤ 112 °C
Junction temperature
TJ
Storage temperature
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
4.5
4.1
15
15
1.5
25
3
75
150
-55 ... 150
Value
500
Unit
V
mA
mW
°C
Unit
K/W
1 2013-09-19
1 page  
Package TSFP-4
BFP405F
5 2013-09-19
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFP405F.PDF ] | |
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