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Número de pieza | BFP405 | |
Descripción | Low Noise Silicon Bipolar RF Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP405 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Low Noise Silicon Bipolar RF Transistor
• For low current applications
• For oscillators up to 12 GHz
• Minimum noise figure NFmin = 1.25 dB at 1.8 GHz
Outstanding Gms = 23 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
3
4
BFP405
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP405
Marking
Pin Configuration
ALs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 110 °C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5
4.1
15
15
1.5
25
3
75
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
1 2013-09-19
1 page Transition frequency fT = ƒ(IC)
f = 2 GHz
VCE = parameter in V
26
GHz
22
20
18
4V
3V
2V
1.5V
16
1V
14
12
10
8
6 0.5V
40 4 8 12 16 mA 22
IC
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter in GHz
40
dB
0.15GHz
32 0.45GHz
28 0.9GHz
1.5GHz
24 1.9GHz
20 2.4GHz
16 3.5GHz
12 5.5GHz
8
10GHz
4
00 4 8 12 16 20 mA 26
IC
BFP405
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 3 V, IC = 5 mA
44
dB
36
32
28
Gms
24
20
16
12 |S21|²
Gma
8
4
00 1 2 3 4 5 6 7 8 GHz 10
f
Power gain Gma, Gms = ƒ (VCE)
IC = 5 mA
f = parameter in GHz
40
dB
0.15GHz
32
0.45GHz
28 0.9GHz
24 1.5GHz
2.4GHz
20 3.5GHz
16
5.5GHz
12
8 10GHz
4
00 1 2 3 4 V 6
VCE
5 2013-09-19
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BFP405.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP405 | NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) | Siemens Semiconductor Group |
BFP405 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
BFP405F | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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