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PDF BFP183W Data sheet ( Hoja de datos )
| Número de pieza | BFP183W | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP183W
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP183W
Marking
Pin Configuration
RHs 1=E 2=C 3=E 4=B -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 58 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
Value
12
20
20
2
65
5
450
150
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
205 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-08
1 page  
Package SOT343
BFP183W
5 2014-04-08
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFP183W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFP183 | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |  Siemens Semiconductor Group |
| BFP183 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
| BFP183R | NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) | Siemens Semiconductor Group |
| BFP183R | NPN Silicon RF Transistor | Infineon Technologies AG |
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