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Numéro de référence | BFP182 | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
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1 Page
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
BFP182
3
4
2
1 VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP182
Marking
RGs
Pin Configuration
1=C 2=E 3=B 4=E
Package
SOT143
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 69 °C 1)
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
12
20
20
2
35
4
250
150
-65 ... 150
-65 ... 150
V
mA
mW
°C
Thermal Resistance
Junction - soldering point 2)
RthJS
325
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-09-2001
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Pages | Pages 7 | ||
Télécharger | [ BFP182 ] |
No | Description détaillée | Fabricant |
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