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PDF BFP181 Data sheet ( Hoja de datos )
| Número de pieza | BFP181 | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFP181 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
3
4
BFP181
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP181
Marking
Pin Configuration
RFs 1 = C 2 = E 3 = B 4 = E -
-
Package
SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 75 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
12
20
20
2
20
2
175
150
-55 ... 150
V
mA
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
430
1TS is measured on the collector lead at the soldering point of the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
K/W
1 2013-10-15
1 page  
Package SOT143
BFP181
5 2013-10-15
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFP181.PDF ] | |
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