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Infineon Technologies AG - NPN Silicon High-Voltage Transistors

Numéro de référence BFN36
Description NPN Silicon High-Voltage Transistors
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFN36 fiche technique
NPN Silicon High-Voltage Transistors
 Suitabled for video output stages in TV sets and
switching power supplies
 High breakdown voltage
 Low collector-emitter saturation voltage
 Complementary types: BFN37, BFN39 (PNP)
BFN36, BFN38
4
3
2
1 VPS05163
Type
BFN36
BFN38
Marking
BFN 36
BFN 38
1=B
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BFN36 BFN38
250 300
250 300
55
200
500
100
200
1.5
150
-65 ... 150
Unit
V
mA
W
°C
RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Nov-30-2001

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