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PDF BFN23 Data sheet ( Hoja de datos )
| Número de pieza | BFN23 | |
| Descripción | Surface mount Si-Epitaxial PlanarTransistors | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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BFN 23
PNP
High Voltage Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Collector-Emitter-voltage
Emitter-Base-voltage
RBE = 2.7 kS
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VCER
- VEB0
Ptot
- IC
- ICM
Tj
TS
Grenzwerte (TA = 25/C)
BFN 23
250 V
250 V
250 V
5V
250 mW 1)
50 mA
100 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 200 V
- ICB0
IE = 0, - VCB = 200 V, Tj = 150/C
- ICB0
Collector-Base cutoff current – Kollektorreststrom
- VCB = 250 V, RBE = 2.7 kS
- VCB = 250 V, RBE = 2.7 kS, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
- ICBR
- ICBR
IC = 0, - VEB = 5 V
- IEB0
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 20 :A
– – 1 :A
– – 50 :A
– – 10 :A
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
12
01.11.2003
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BFN23.PDF ] | |
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