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PDF BFG67 Data sheet ( Hoja de datos )
| Número de pieza | BFG67 | |
| Descripción | NPN 8 GHz wideband transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02
1 page  
Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
handboo1k,2h0alfpage
h FE
80
MBB301
40
0
0 20 40 60
I C (mA)
VCE = 5 V.
Fig.4 DC current gain as a function of collector
current.
handbook0, .h8alfpage
Cre
(pF)
0.6
0.4
MBB302
0.2
0
0 4 8 12 16
VCB (V)
IC = ic = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
10
handbook, halfpage
fT
(GHz)
8
MBB303
6
4
2
0
0 10 20 30 40
IC (mA)
VCE = 8 V; Tamb = 25 °; f = 2 GHz.
Fig.6 Transition frequency as a function of
collector current.
1998 Oct 02
handbook,2h5alfpage
gain
(dB)
20
15
10
MSG
G UM
MBB304
G max
5
0
0 10 20 30 IC (mA) 40
VCE = 8 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
5
5 Page 
Philips Semiconductors
NPN 8 GHz wideband transistors
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
Product specification
BFG67; BFG67/X; BFG67/XR
SOT143B
DB
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.45 0.55
2.1 0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
1998 Oct 02
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BFG67.PDF ] | |
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