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PDF BFG21W Data sheet ( Hoja de datos )
| Número de pieza | BFG21W | |
| Descripción | UHF power transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
M3D124
BFG21W
UHF power transistor
Product specification
Supersedes data of 1997 Nov 21
File under Discrete Semiconductors, SC14
1998 Jul 06
1 page  
Philips Semiconductors
UHF power transistor
Product specification
BFG21W
handbook, full pagewidth
VC
R1
R2
TR1
C3
RF input
50 Ω
L1
C1 L2
C2
VS
L5
R3 C7
C6
L3
DUT
L4
C5 RF output
50 Ω
C4
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT
DESCRIPTION
C1, C5
multilayer ceramic chip capacitor; note 1
C2 multilayer ceramic chip capacitor; note 1
C3, C6
multilayer ceramic chip capacitor, note 1
C4 multilayer ceramic chip capacitor; note 1
C7 multilayer ceramic chip capacitor; note 1
L1, L4
stripline; note 2
L2 stripline; note 2
L3 stripline; note 2
L5 Grade 4S2 Ferroxcube chip bead
R1 metal film resistor
R2, R3
metal film resistor
TR1 NPN transistor
VALUE
24 pF
3.3 pF
15 pF
2.4 pF
1 nF
100 Ω
50 Ω
50 Ω
220 Ω; 0.4 W
10 Ω; 0.4 W
BC817
DIMENSIONS CATALOGUE No.
18 × 0.2 mm
3.2 × 0.8 mm
4.6 × 0.8 mm
4330 030 36300
9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6.15,
tan δ = 0.0019); thickness 0.64 mm, copper cladding = 35 µm.
1998 Jul 06
5
5 Page 
Philips Semiconductors
UHF power transistor
NOTES
Product specification
BFG21W
1998 Jul 06
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BFG21W.PDF ] | |
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