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Numéro de référence | BFG135A | ||
Description | NPN Silicon RF Transistor | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
NPN Silicon RF Transistor
For low-distortion broadband amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
fT = 6 GHz
BFG 135A
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 135A
Marking
Pin Configuration
BFG135A 1 = E 2 = B 3 = E 4 = C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS 100 °C F)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
15
25
25
2
150
20
1
150
-65 ... 150
-65 ... 150
50
Unit
V
mA
W
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-26-1999
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Pages | Pages 6 | ||
Télécharger | [ BFG135A ] |
No | Description détaillée | Fabricant |
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