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Infineon Technologies AG - NPN Silicon RF Transistor

Numéro de référence BFG135A
Description NPN Silicon RF Transistor
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BFG135A fiche technique
NPN Silicon RF Transistor
 For low-distortion broadband amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
 Power amplifiers for DECT and PCN systems
 Integrated emitter ballast resistor
 fT = 6 GHz
BFG 135A
4
3
2
1 VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG 135A
Marking
Pin Configuration
BFG135A 1 = E 2 = B 3 = E 4 = C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS  100 °C F)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
15
25
25
2
150
20
1
150
-65 ... 150
-65 ... 150
 50
Unit
V
mA
W
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-26-1999

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