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PDF BF999 Data sheet ( Hoja de datos )
| Número de pieza | BF999 | |
| Descripción | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Silicon N Channel MOSFET Triode
q For high-frequency stages up to 300 MHz,
preferably in FM applications
BF 999
Type
BF 999
Marking
LB
Ordering Code
(tape and reel)
Q62702-F1132
Pin Configuration
123
GDS
Package1)
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation, TA ≤ 60 ˚C
Storage temperature range
Channel temperature
Thermal Resistance
Junction - ambient 2)
Symbol
VDS
ID
± IGSM
Ptot
Tstg
Tch
Values
Unit
20 V
30 mA
10
200 mW
– 55 … + 150 ˚C
150
Rth JA
≤ 450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
1 page  
BF 999
Gate forward transfer admittance y21s
VDS = 10 V, VGS = 0,
IDSS = 10 mA, (common-source)
Output admittance y22s
VDS = 10 V, VGS = 0,
IDSS = 10 mA, (common-source)
Test circuit for power gain and noise figure
f = 200 MHz
Semiconductor Group
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BF999.PDF ] | |
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