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Numéro de référence | BF998RA | ||
Description | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | ||
Fabricant | Vishay Telefunken | ||
Logo | |||
1 Page
BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes
D Low noise figure
D Low feedback capacitance
D High cross modulation performance
D Low input capacitance
D High AGC-range
D High gain
21
12
94 9279
13 579
34
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
12
94 9278
43
95 10831
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
13 654
13 566
43
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85011
Rev. 4, 23-Jun-99
www.vishay.de • FaxBack +1-408-970-5600
1 (9)
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Pages | Pages 9 | ||
Télécharger | [ BF998RA ] |
No | Description détaillée | Fabricant |
BF998R | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | Siemens Semiconductor Group |
BF998R | Silicon N-channel dual-gate MOS-FETs | NXP Semiconductors |
BF998R | N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode | Vishay Telefunken |
BF998R | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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