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PDF BF998R Data sheet ( Hoja de datos )

Número de pieza BF998R
Descripción Silicon N-Channel MOSFET Tetrode
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! BF998R Hoja de datos, Descripción, Manual

Silicon N_Channel MOSFET Tetrode
Short-channel transistor
with high S / C quality factor
For low-noise, gain-controlled
input stage up to 1 GHz
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF998...
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF998
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF998R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
TS 76 °C, BF998, BF998R
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
Ptot
Tstg
Tch
Thermal Resistance
Parameter
Symbol
Channel - soldering point2), BF998, BF998R
Rthchs
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
12
30
10
200
-55 ... 150
150
Value
370
Marking
MOs
MRs
Unit
V
mA
°C
Unit
K/W
1 2007-04-20

1 page




BF998R pdf
BF998...
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
30
4V
mA
2V
Power gain Gps = ƒ (VG2S)
f = 45 MHz
30
dB
20 1V 20
15 15
10
0V
5
10
5
0
-1 -0.75 -0.5 -0.25 0 0.25 0.5 V
1
VG1S
Noise figure F = ƒ (VG2S)
f = 45 MHz
0
012
Noise figure F = ƒ (VG2S)
f = 800 MHz
V4
VG2S
10
dB
8
7
6
5
4
3
2
1
0
0 1 2V 4
VG2S
5
dB
3
2
1
0
0 1 2V 4
VG2S
5 2007-04-20

5 Page










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