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PDF BF998R Data sheet ( Hoja de datos )
| Número de pieza | BF998R | |
| Descripción | Silicon N-channel dual-gate MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R
Silicon N-channel dual-gate
MOS-FETs
Product specification
Supersedes data of April 1991
1996 Aug 01
1 page  
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
24
handbIDook, halfpage
(mA)
20
16
MGE813
VG1-S =
0.4 V
0.3 V
0.2 V
12 0.1 V
0V
8 −0.1 V
−0.2 V
4 −0.3 V
−0.4 V
−0.5 V
0
0 2 4 6 8 10
VDS (V)
24
handbIoDok, halfpage
(mA)
20
16
12
8
4
0
−1
MGE815
3V
VG2-S = 4 V
2V
1V
0V
0
VG1 (V)
1
VG2-S = 4 V; Tamb = 25 C.
Fig.5 Output characteristics; typical values.
VDS = 8 V; Tamb = 25 C.
Fig.6 Transfer characteristics; typical values.
24
handboIDok, halfpage
(mA)
20
MGE814
max typ
16
12
min
8
4
0
−1600 −1200 −800
−400
0
400
VG1 (mV)
handbook,3h0alfpage
|yfs|
(mS)
24
18
MGE811
4V
3V
2V
1V
12
6
VG2-S = 0 V
0
048
0.5 V
12 16 20
ID (mA)
VDS = 8 V; VG2-S = 4 V; Tamb = 25 C.
Fig.7 Drain current as a function of gate 1
voltage; typical values.
1996 Aug 01
VDS = 8 V; Tamb = 25 C.
Fig.8 Forward transfer admittance as a function of
drain current; typical values.
5
5 Page 
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
PACKAGE OUTLINES
Plastic surface-mounted package; 4 leads
DB
Product specification
BF998; BF998R
SOT143B
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1 0.48 0.88 0.15 3.0
0.38 0.78 0.09 2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45 0.55
0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
1996 Aug 01
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BF998R.PDF ] | |
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