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PDF BF987 Data sheet ( Hoja de datos )
| Número de pieza | BF987 | |
| Descripción | SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz/ preferably in FM applications High overload capability) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Silicon N Channel MOSFET Triode
q For high-frequency stages up to 300 MHz,
preferably in FM applications
q High overload capability
BF 987
Type
BF 987
Marking
–
Ordering Code
Q62702-F35
Pin Configuration
123
DSG
Package1)
TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation, TA ≤ 45 ˚C
Storage temperature range
Channel temperature
Symbol
VDS
ID
± IGSM
Ptot
Tstg
Tch
Values
Unit
20 V
30 mA
10
300 mW
– 55 … + 150 ˚C
150
Thermal Resistance
Junction - ambient
Rth JA
≤ 350
K/W
1) For detailed information see chapter Package Outlines.
1 page  
BF 987
Gate forward transfer admittance y21s
VDS = 10 V, VG = 0, IDSS = 10 mA
(common source)
Output admittance y22s
VDS = 10 V, IDSS = 10 mA, VG = 0
(common source)
Test circuit for power gain and noise figure
f = 200 MHz
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BF987.PDF ] | |
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