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PDF BF720T1 Data sheet ( Hoja de datos )
| Número de pieza | BF720T1 | |
| Descripción | NPN Ssilicon Transistor | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF720T1/D
NPN Silicon Transistor
COLLECTOR 2,4
BF720T1
Motorola Preferred Device
BASE
1
EMITTER 3
NPN SILICON
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation up to TA = 25°C
Storage Temperature Range
Junction Temperature
DEVICE MARKING
DC
Symbol
VCEO
VCBO
VCER
VEBO
IC
PD
Tstg
TJ
Value
300
300
300
5.0
100
1.5
– 65 to +150
150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
4
1
2
3
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
from Junction-to-Ambient(1)
Symbol
RθJA
Max
83.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Symbol
Min Max Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 300 — Vdc
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO 300 — Vdc
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, RBE = 2.7 kΩ)
V(BR)CER 300 — Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO 5.0 — Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
— 10 nAdc
Collector–Emitter Cutoff Current
(VCE = 250 Vdc, RBE = 2.7 kΩ)
(VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)
ICER
— 50 nAdc
— 10 µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
PACKAGE DIMENSIONS
A
F
4
S
1 23
B
L
G
0.08 (0003)
H
D
C
M
J
K
CASE 318E–04
ISSUE H
TO-261AA
BF720T1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.249 0.263
B 0.130 0.145
C 0.060 0.068
D 0.024 0.035
F 0.115 0.126
G 0.087 0.094
H 0.0008 0.0040
J 0.009 0.014
K 0.060 0.078
L 0.033 0.041
M 0_ 10 _
S 0.264 0.287
MILLIMETERS
MIN MAX
6.30 6.70
3.30 3.70
1.50 1.75
0.60 0.89
2.90 3.20
2.20 2.40
0.020 0.100
0.24 0.35
1.50 2.00
0.85 1.05
0 _ 10 _
6.70 7.30
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BF720T1.PDF ] | |
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