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Siemens Semiconductor Group - PNP Silicon RF Transistor (For VHF oscillator applications)

Numéro de référence BF660
Description PNP Silicon RF Transistor (For VHF oscillator applications)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BF660 fiche technique
PNP Silicon RF Transistor
q For VHF oscillator applications
BF 660
Type
BF 660
Marking
LEs
Ordering Code
(tape and reel)
Q62702-F982
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Emitter current
Total power dissipation, TA 25 ˚C
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
IE
Ptot
Tj
Tstg
Values
Unit
30 V
40
4
25 mA
30
280 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
450
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94

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