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Numéro de référence | BF579R | ||
Description | Silicon PNP Planar RF Transistor | ||
Fabricant | Vishay Telefunken | ||
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1 Page
Silicon PNP Planar RF Transistor
BF579/BF579R
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and
low cross modulation.
Features
D High transition frequency
D Low distortion
11
94 9280
23
BF579 Marking: G7
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
9510527
32
BF579R Marking: GG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
–VCBO
–VCEO
–VEBO
–IC
Ptot
Tj
Tstg
Value
20
20
3
25
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85001
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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Pages | Pages 5 | ||
Télécharger | [ BF579R ] |
No | Description détaillée | Fabricant |
BF579 | Silicon PNP Planar RF Transistor | Vishay Telefunken |
BF579R | Silicon PNP Planar RF Transistor | Vishay Telefunken |
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