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Infineon Technologies AG - Silicon N-Channel MOSFET Tetrode

Numéro de référence BF2040
Description Silicon N-Channel MOSFET Tetrode
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BF2040 fiche technique
Silicon N-Channel MOSFET Tetrode
For low noise , high gain controlled
input stages up to 1GHz
Operating voltage 5 V
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BF2040...
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF2040
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF2040R
SOT143R 1=D 2=S 3=G1 4=G2 -
-
BF2040W
SOT343 1=D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C, BF2040, BF2040R
TS 94 °C, BF2040W
Storage temperature
Channel temperature
Thermal Resistance
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
8
40
10
7
200
200
-55 ... 150
150
Parameter
Channel - soldering point1)
BF2040, BF2040R
BF2040W
Symbol
Rthchs
Value
370
280
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
NFs
NFs
NFs
Unit
V
mA
V
mW
°C
Unit
K/W
1 2007-06-01

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