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Número de pieza | BF2030 | |
Descripción | Silicon N-Channel MOSFET Tetrode | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BF2030 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BF2030...
AGC
RF
Input RG1
G2
G1
VGG
GND
Drain
RF Output
+ DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
Package
Pin Configuration
BF2030
SOT143 1= S 2=D 3=G2 4=G1 -
-
BF2030R
SOT143R 1= D 2=S 3=G1 4=G2 -
-
BF2030W
SOT343 1= D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS ≤ 76 °C, BF2030, BF2030R
TS ≤ 94 °C, BF2030W
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
1Pb-containing package may be available upon special request
Value
8
40
10
6
200
200
-55 ... 150
150
Marking
NDs
NDs
NDs
Unit
V
mA
V
mW
°C
1 2007-04-20
1 page BF2030...
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
210
µA 4V
180
165 3.5V
150
135
3V
120
105
90
2.5V
75
60 2V
45
30
15
0
0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
30
mA
4V
24
3V
22
20
18
16
14 2V
12
10
1.5V
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 2
VG1S
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
40
mS 4V
30 3V
25
2.5V
20
2V
15
10
5
0
0 4 8 12 16 20 24 mA 30
ID
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 100kΩ
(connected to VGG, VGG=gate1 supply voltage)
13
mA
11
10
9
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VGG
5 2007-04-20
5 Page BF2030...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11 2007-04-20
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet BF2030.PDF ] |
Número de pieza | Descripción | Fabricantes |
BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) | Siemens Semiconductor Group |
BF2030 | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF2030R | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
BF2030W | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) | Siemens Semiconductor Group |
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