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PDF BF1105WR Data sheet ( Hoja de datos )
| Número de pieza | BF1105WR | |
| Descripción | N-channel dual-gate MOS-FETs | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1105; BF1105R; BF1105WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1997 Dec 01
File under Discrete Semiconductors, SC07
1997 Dec 02
1 page  
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
handbook,2h5alfpage
ID
(mA)
20
MGM244
VG1 = 1.7 V
1.6 V
1.5 V
15
1.4 V
10 1.3 V
1.2 V
5 1.1 V
1V
0
02468
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
handbook,4h0alfpage
ID
(mA)
30
20
10
0
0 0.5
MGM245
VG2-S = 4 V 3.5 V
3V
2.5 V
2V
1.5 V
1V
1 1.5 2 2.5
VG1 (V)
VDS = 5 V.
Tj = 25 °C.
Fig.6 Transfer characteristics; typical values.
handbook,4h0alfpage
yfs
(mS)
30
20
MGM246
VG2-S = 4 V
3.5 V
3V
10
2.5 V
2V
0
0 10 20 ID (mA) 30
VDS = 5 V.
Tj = 25 °C.
Fig.7 Forward transfer admittance as a function
of drain current; typical values.
handbook,1h6alfpage
ID
(mA)
12
8
4
(1) (2)(3)
(4) (5)
MGM247
0
01 234 5
VG2-S (V)
(1) VDS = 5 V.
(2) VDS = 4.5 V.
(3) VDS = 4 V.
(4) VDS = 3.5 V.
(5) VDS = 3 V.
Fig.8 Drain current as a function of gate 2
voltage; typical values.
1997 Dec 02
5
5 Page 
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
DB
E AX
y
vM A
e
bp w M B
34
HE
Q
21
b1
e1
A
A1
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.55 0.45
2.1 0.25 0.25
0.2
0.1
0.1
OUTLINE
VERSION
SOT143R
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
1997 Dec 02
11
11 Page | ||
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| PDF Descargar | [ Datasheet BF1105WR.PDF ] | |
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