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Numéro de référence | BDX63C | ||
Description | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR | ||
Fabricant | Seme LAB | ||
Logo | |||
1 Page
MECHANICAL DATA
Dimensions in mm
26.6 max.
4.2
9.0 max.
2.5
BDX63
BDX63A
BDX63B
BDX63C
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
BE
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
10.9
12.8
TO3 Package.
Case connected to collector.
PNP complements are:
BDX62, BDX62A, BDX62B, BDX62C.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
BDX BDX BDX BDX
63 63A 63B 63C
VCEO
Collector - emitter voltage (open base)
60 80 100 120 V
VCBO
Collector - base voltage (open emitter)
80 100 120 140 V
VEBO
Emitter - base voltage (open collector)
5 5 5 5V
IC Collector current
8A
ICM Collector current (peak)
12 A
IB Base current
150 mA
Ptot Total power dissipation at Tcase= 25°C
90 W
Tj Maximum junction temperature
200 °C
Tstj Storage junction temperature
-65 to 200
°C
Rth j-mb
Thermal resistance, junction to mounting base.
1.94
°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/93
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Pages | Pages 2 | ||
Télécharger | [ BDX63C ] |
No | Description détaillée | Fabricant |
BDX63 | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR | Seme LAB |
BDX63 | Silicon NPN Darlington Power Transistor | Inchange Semiconductor |
BDX63 | NPN SILICON DARLINGTONS | Comset Semiconductors |
BDX63A | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR | Seme LAB |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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