PDF BDX53B Data sheet ( Hoja de datos )

Número de pieza	BDX53B
Descripción	Plastic Medium-Power Complementary Silicon Transistors
Fabricantes	Motorola Inc
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS Characteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case Symbol VCEO VCB VEB IC IB PD TJ, Tstg BDX53B BDX53C BDX54B BDX54C 80 100 80 100 5.0 8.0 12 0.2 60 0.48 – 65 to + 150 Symbol RθJA RθJC Max 70 70 Unit Vdc Vdc Vdc Adc Adc Watts W/_C _C Unit _C/W _C/W TA TC 4.0 80 NPN BDX53B BDX53C PNP BDX54B BDX54C DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 – 100 VOLTS 65 WATTS CASE 221A–06 TO–220AB 3.0 60 2.0 40 1.0 20 TC TA 0 0 20 REV 7 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating 1 1 page BDX53B BDX53C BDX54B BDX54C NPN BDX53B, BDX53C + 5.0 v+ 4.0 IC/IB hFE/3 + 3.0 + 2.0 25°C to 150°C + 1.0 – 55°C to 25°C 0 – 1.0 θVC for VCE(sat) – 2.0 – 3.0 θVB for VBE – 4.0 25°C to 150°C – 55 to 150°C PNP BDX54B, BDX54C + 5.0 v+ 4.0 IC/IB hFE/3 + 3.0 + 2.0 25°C to 150°C + 1.0 – 55°C to 25°C 0 – 1.0 θVC for VCE(sat) – 2.0 – 3.0 θVB for VBE – 4.0 25°C to 150°C – 55 to 150°C – 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 – 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 5.0 7.0 10 105 REVERSE 104 VCE = 30 V 103 FORWARD 105 REVERSE 104 VCE = 30 V 103 FORWARD 102 TJ = 150°C 101 100 100°C 102 TJ = 150°C 101 100°C 100 25°C 10– 1 25°C – 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 10– 1 + 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut–Off Region NPN BDX53B BDX53C BASE COLLECTOR [ [8.0 k 120 PNP BDX54B BDX54C COLLECTOR BASE [ [8.0 k 120 EMITTER Figure 13. Darlington Schematic EMITTER Motorola Bipolar Power Transistor Device Data 5 5 Page

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