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PDF BDV64B Data sheet ( Hoja de datos )
| Número de pieza | BDV64B | |
| Descripción | Complementary Silicon Plastic Power Darlingtons | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BDV64B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Plastic
Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain
HFE = 1000 (min.) @ 5 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–in Base Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Value
100
100
5.0
10
20
0.5
125
1.0
– 65 to + 150
Symbol
θJC
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
Order this document
by BDV65B/D
BDNVP6N5B
BDPVN6P4B
DARLINGTONS
10 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 – 100 – 120 VOLTS
125 WATTS
CASE 340D–01
SOT 93, TO–218 TYPE
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
BDV65B BDV64B
C
B QE
U4
SL
K
1 23
A
V
G
DJ
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A 19.00 19.60
B 14.00 14.50
C 4.20 4.70
D 1.00 1.30
E 1.45 1.65
G 5.21 5.72
H 2.60 3.00
J 0.40 0.60
K 28.50 32.00
L 14.70 15.30
Q 4.00 4.25
S 17.50 18.10
U 3.40 3.80
V 1.50 2.00
INCHES
MIN MAX
0.749 0.771
0.551 0.570
0.165 0.185
0.040 0.051
0.058 0.064
0.206 0.225
0.103 0.118
0.016 0.023
1.123 1.259
0.579 0.602
0.158 0.167
0.689 0.712
0.134 0.149
0.060 0.078
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–01
SOT 93, TO–218 TYPE
ISSUE A
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BDV64B.PDF ] | |
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