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Numéro de référence | BDS10SMD | ||
Description | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES | ||
Fabricant | Seme LAB | ||
Logo | |||
SEME
LAB
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
MECHANICAL DATA
Dimensions in mm
10.6
4.6
0.8
3.6
Dia.
1 23
2.54
BSC
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
1.0
2.70
BSC
3 .6 0 (0 .1 4 2 )
M ax.
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
2 • POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M - TO220 Metal Package - Isolated
SMD1 - Ceramic Surface Mount Package
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO
Collector - Base voltage (IE = 0)
VCEO
Collector - Emitter voltage (IB = 0)
VEBO
Emitter - Base voltage (IC = 0)
IE , IC
Emitter , Collector current
IB Base current
Ptot Total power dissipation at Tcase £ 75°C
Tstg Storage Temperature
Tj Junction Temperature
BDS10 BDS11 BDS12
60V 80V 100V
60V 80V 100V
5V
15A
5A
90W
–65 to 200°C
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/00
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Pages | Pages 2 | ||
Télécharger | [ BDS10SMD ] |
No | Description détaillée | Fabricant |
BDS10SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES | Seme LAB |
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