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Numéro de référence | BDP950 | ||
Description | PNP Silicon AF Power Transistors | ||
Fabricant | Infineon Technologies AG | ||
Logo | |||
1 Page
PNP Silicon AF Power Transistors
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP947, BDP949 (NPN)
BDP948, BDP950
4
3
2
1 VPS05163
Type
BDP948
BDP950
Marking
BDP 948
BDP 950
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BDP948
BDP950
45 60
45 60
55
3
5
200
500
3
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
A
mA
W
°C
K/W
1 Jul-06-2001
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Pages | Pages 4 | ||
Télécharger | [ BDP950 ] |
No | Description détaillée | Fabricant |
BDP950 | PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) | Siemens Semiconductor Group |
BDP950 | PNP Silicon AF Power Transistors | Infineon Technologies AG |
BDP951 | NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) | Siemens Semiconductor Group |
BDP951 | NPN Silicon AF Power Transistor | Infineon Technologies AG |
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