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Infineon Technologies AG - PNP Silicon AF Power Transistors

Numéro de référence BDP950
Description PNP Silicon AF Power Transistors
Fabricant Infineon Technologies AG 
Logo Infineon Technologies AG 





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BDP950 fiche technique
PNP Silicon AF Power Transistors
 For AF driver and output stages
 High collector current
 High current gain
 Low collector-emitter saturation voltage
 Complementary types: BDP947, BDP949 (NPN)
BDP948, BDP950
4
3
2
1 VPS05163
Type
BDP948
BDP950
Marking
BDP 948
BDP 950
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BDP948
BDP950
45 60
45 60
55
3
5
200
500
3
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
A
mA
W
°C
K/W
1 Jul-06-2001

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