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Siemens Semiconductor Group - NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)

Numéro de référence BDP949
Description NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BDP949 fiche technique
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP948, BDP950 (PNP)
BDP 947
Type
BDP 947
BDP 949
Marking Ordering Code
BDP 947 Q62702-D1335
BDP 949 Q62702-D1337
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
4=C
4=C
Package
SOT-223
SOT-223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BDP 947
VCEO
BDP 949
Collector-base voltage
BDP 947
VCBO
BDP 949
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99°C
Junction temperature
Storage temperature
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Values
45
60
Unit
V
45
60
5
3
5
200
500
3
150
- 65 ... + 150
A
mA
W
°C
42
17
K/W
Semiconductor Group
1
Nov-28-1996

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