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Siemens Semiconductor Group - PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)

Numéro de référence BDP948
Description PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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BDP948 fiche technique
PNP Silicon AF Power Transistor
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP947, BDP949 (NPN)
BDP 948
Type
BDP 948
BDP 950
Marking Ordering Code
BDP 948 Q62702-D1336
BDP 950 Q62702-D1338
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
4=C
4=C
Package
SOT-223
SOT-223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BDP 948
VCEO
BDP 950
Collector-base voltage
BDP 948
VCBO
BDP 950
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99°C
Junction temperature
Storage temperature
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Values
45
60
Unit
V
45
60
5
3
5
200
500
3
150
- 65 ... + 150
A
mA
W
°C
42
17
K/W
Semiconductor Group
1
Nov-28-1996

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