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PDF BD791 Data sheet ( Hoja de datos )
| Número de pieza | BD791 | |
| Descripción | NPN Plastic Silicon Power Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
NPN Plastic Silicon Power
Transistor
. . . designed for low power audio amplifier and low–current, high
speed switching applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
• High Current Gain — Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ16
Symbol
VCEO
VCB
VEBO
IC
IB
PD
TJ,Tstg
Symbol
RθJC
Max
100
100
6.0
4.0
8.0
1.0
15
0.12
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max Unit
8.34 _C/W
1.6
BD791
ON Semiconductor Preferred Device
4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS
CASE 77–09
TO–225AA TYPE
12 1.2
8.0 0.8
4.0 0.4
0
20 40 60 80 100 120 140
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
0
160
Publication Order Number:
BD791/D
1 page  
BD791
PACKAGE DIMENSIONS
Q
H
CASE 77–09
TO–225AA TYPE
ISSUE W
–B–
U
F
123
–A–
M
K
C
VJ
GR
S 0.25 (0.010) M A M B M
D 2 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.425 0.435
B 0.295 0.305
C 0.095 0.105
D 0.020 0.026
F 0.115 0.130
G 0.094 BSC
H 0.050 0.095
J 0.015 0.025
K 0.575 0.655
M 5_ TYP
Q 0.148 0.158
R 0.045 0.065
S 0.025 0.035
U 0.145 0.155
V 0.040 ---
MILLIMETERS
MIN MAX
10.80 11.04
7.50 7.74
2.42 2.66
0.51 0.66
2.93 3.30
2.39 BSC
1.27 2.41
0.39 0.63
14.61 16.63
5_ TYP
3.76 4.01
1.15 1.65
0.64 0.88
3.69 3.93
1.02 ---
0.25 (0.010) M A M B M
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BD791.PDF ] | |
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