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ON Semiconductor - DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS

Numéro de référence BD780
Description DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS
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BD780 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD777/D
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general purpose amplifier and high–speed switching applications.
High DC Current Gain
hFE = 1400 (Typ) @ IC = 2.0 Adc
Collector–Emitter Sustaining Voltage — @ 10 mAdc
VCEO(sus) = 45 Vdc (Min) — BD776
VCEO(sus) = 60 Vdc (Min) — BD777, 778
VCEO(sus) = 80 Vdc (Min) — BD780
Reverse Voltage Protection Diode
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMonolithic Construction with Built–in Base–Emitter output Resistor
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current —
Continuous Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTC = 25_C – Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD777
BD776 BD778 BD780
45 60 80
45 60 80
5.0
4.0
6.0
100
15
0.12
– 65 to + 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristics
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
Symbol
RθJC
RθJA
Max
8.34
83.3
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
_C/W
16 1.6
NPN
BD777
PNP
BD776
BD778
BD780 *
*Motorola Preferred Device
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
45, 60, 80 VOLTS
15 WATTS
CASE 77–08
TO–225AA TYPE
12 1.2
8.0 0.8
4.0 0.4
0
20 40
60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
140
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
0
160
1

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