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Power Innovations Limited - PNP SILICON POWER TRANSISTORS

Numéro de référence BD546A
Description PNP SILICON POWER TRANSISTORS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





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BD546A fiche technique
Copyright © 1997, Power Innovations Limited, UK
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD545 Series
q 85 W at 25°C Case Temperature
q 15 A Continuous Collector Current
q Customer-Specified Selections Available
B
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD546
BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Ptot
TA
Tj
Tstg
TL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
W
W
°C
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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