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Power Innovations Limited - NPN SILICON POWER TRANSISTORS

Numéro de référence BD543
Description NPN SILICON POWER TRANSISTORS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





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BD543 fiche technique
Copyright © 1997, Power Innovations Limited, UK
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD544 Series
q 70 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q 10 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD543
BD543A
BD543B
BD543C
BD543
BD543A
BD543B
BD543C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Ptot
TA
Tj
Tstg
TL
VALUE
40
60
80
100
40
60
80
100
5
8
10
70
2
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
A
W
W
°C
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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