BLW33 Datasheet PDF - NXP Semiconductors
| Part Number | BLW33 | |
| Description | UHF linear power transistor | |
| Manufacturers | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW33
UHF linear power transistor
Product specification
August 1986
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Philips Semiconductors
UHF linear power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 4 mA
open base; IC = 30 mA
Emitter-base breakdown voltage
open collector; IE = 2 mA
Collector cut-off current
VBE = 0; VCE = 30 V
VBE = 0; VCE = 30 V; Tj = 175 °C
D.C. current gain
IC = 300 mA; VCE = 25 V
IC = 300 mA; VCE = 25 V; Tj = 175 °C
Collector-emitter saturation voltage (1)
IC = 600 mA; IB = 60 mA
Transition frequency at f = 500 MHz (2)
−IE = 300 mA; VCB = 25 V
−IE = 600 mA; VCB = 25 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 25 V
Feedback capacitance at f = 1 MHz
IC = 20 mA; VCE = 25 V
Collector-stud capacitance
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01.
Product specification
BLW33
V(BR)CES
V(BR)CEO
>
>
50 V
30 V
V(BR)EBO >
4V
ICES < 1,0 mA
ICES < 2,5 mA
hFE
> 20
typ. 40
hFE < 120
VCEsat
typ. 450 mV
fT typ. 3,4 GHz
fT typ. 3,1 GHz
Cc typ. 6,6 pF
Cre typ. 3,5 pF
Ccs typ. 1,2 pF
August 1986
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BLW33 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BLW33.PDF Datasheet ] | |
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