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PDF BLV58 Data sheet ( Hoja de datos )
| Número de pieza | BLV58 | |
| Descripción | UHF linear push-pull power transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BLV58 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV58
UHF linear push-pull power
transistor
Product specification
September 1991
1 page  
Philips Semiconductors
UHF linear push-pull power transistor
Product specification
BLV58
handbook1, 2ha0lfpage
h FE
80
MRA350
40
00
VCE = 25 V.
1
23
IC (A)
Fig.4 DC current gain as a function of collector
current, typical values.
handbooCkc, halfpage
(pF)
120
MRA346
80
40
0
0 10 20 30 40
VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
September 1991
5
5 Page 
Philips Semiconductors
UHF linear push-pull power transistor
Product specification
BLV58
handbook, h6alfpage
Zi
(Ω)
4
2
xi
MRA352
ri
0
400 500 600 700 800 900
f (MHz)
Class-A operation; VCE = 25 V;
ICQ = 1.6 A (per section); PL = 25 W (total device);
Th = 25 °C.
Fig.12 Input impedance per section (series
components) as a function of frequency,
typical values.
handbook, h6alfpage
ZL
(Ω)
4
2
MRA353
RL
XL
0
-1
400 500 600 700 800 900
f (MHz)
Class-A operation; VCE = 25 V;
ICQ = 1.6 A (per section); PL = 25 W (total device);
Th = 25 °C.
Fig.13 Load impedance per section (series
components) as a function of frequency,
typical values.
handbook, 1ha6lfpage
GP
(dB)
14
MRA347
handbook, halfpage
Zi
ZL MBA451
Fig.14 Definition of transistor impedance.
12
10
400 500 600 700 800 900
f (MHz)
Class-A operation; VCE = 25 V;
ICQ = 1.6 A (per section); PL = 25 W (total device);
Th = 25 °C.
Fig.15 Power gain as a function of frequency,
typical values.
September 1991
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BLV58.PDF ] | |
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