(PDF) BLV103 Datasheet - UHF power transistor

Número de pieza	BLV103
Descripción	UHF power transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product speciﬁcation March 1993 1 page Philips Semiconductors UHF power transistor Product speciﬁcation BLV103 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit, Rth mb-h = 0.4 K/W. MODE OF OPERATION f (MHz) VCE ICQ PL (V) (mA) (W) c.w. class-AB 960 24 5 4 960 26 5 4 GP (dB) > 11.5 typ. 13 typ. 14 ηc (%) > 45 typ. 48 typ. 50 handbook, 1ha6lfpage GP (dB) 12 GP MRA359 80 η (%) 60 8 η 4 40 20 00 024 68 PL (W) Class-AB operation; ICQ = 5 mA; f = 960 MHz; VCE = 24 V. Fig.6 Gain and efficiency as functions of load power, typical values. handbook, ha8lfpage PL (W) 6 4 MRA364 VCE = 26 V 24 V 2 0 0 200 400 600 800 PIN (mW) Class-AB operation; ICQ = 5 mA; f = 960 MHz. Fig.7 Load power as a function of drive power, typical values. Ruggedness in class-AB operation The BLV103 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power under the following conditions: VCE = 24 V; f = 960 MHz; Th = 25 °C; Rth mb-h = 0.4 K/W. March 1993 5 5 Page

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PDF BLV103 Data sheet ( Hoja de datos )